RF Power LDMOS Transistor PN: MRFE6VP61K25HR6

This ia a genuine NXP Semiconductors' High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs transistor with Model #: MRFE6VP61K25HR6

• Brand: NXP Semiconductors
• Part #: MRFE6VP61K25HR6
• Model #: MRFE6VP61K25HR6
• Technical Specs:-
  • Packaging: Tape and Reel
  • Rad Hardened: No
  • Frequency (Max): 230(MHz)
  • Frequency (Min): 1.8(MHz)
  • Mounting: Screw
  • Channel Mode: Enhancement
  • Channel Type: N
  • Package Type: Case 375D-05
  • Drain Source Voltage (Max): 133(V)
  • Drain Efficiency (Typ): 74(%)
  • Reverse Capacitance (Typ): 2.8@50V(pF)
  • Screening Level: Military
  • Operating Temp Range: -55C to 225C
  • Number of Elements: 2
  • Output Capacitance (Typ)@Vds: 185@50V(pF)
  • Input Capacitance (Typ)@Vds: 562@50V(pF)
  • Power Gain (Typ)@Vds: 24(dB)
  • Mode Of Operation: CW/Pulsed RF
  • Pin Count: 5
• Condition: New
• Warranty: 1 (one) year Tekmart warranty

Key points to note on MRFE6VP61K25HR6 transistors:-

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
•  In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.